Nanoscale silicon field effect transistors fabricated using imprint lithography

We report the fabrication and characterization of nanoscale silicon field effect transistors using nanoimprint lithography. With this lithographic technique and dry etching, we have patterned a variety of nanoscale transistor features in silicon, including 100 nm wire channels, 250-nm-diam quantum dots, and ring structures with 100 nm ring width, over a 232 cm lithography field with good uniformity. Compared with devices fabricated by the conventional electron-beam lithography, we did not observe any degradation in the device characteristics. The successful fabrication of the semiconductor nanodevices represents a step forward to make nanoimprint lithography a viable technique for the mass production of semiconductor devices. © 1997 American Institute of Physics. @S0003-6951~97!01039-5#